Dependent Sources and MOSFETs (week 1)

Overview:
     The purpose of this lab is to use a MOSFET in order to test and analyze a simple voltage controlled current source.

Schematic of circuit:












                       

  

         Experimental Resistance: 97.7  Ω

         MOSFET theshold voltage: 1.45 V

Data:

     Gate-to-Source Voltage vs. Drain Current

     

     

     From our data and plot, we discovered that the drain current can be manipulated with a variable voltage through the gate terminal. This means that the MOSFET behaves as a VCCS because the current through it is dependent on the voltage across it. As we slowly increase the gate voltage, we notice the drain current rise. There was a dramatic rise on our results between voltages of 2.05 and 2.45.

     With the use of Excel, we found the value of g 97.275. The selected points were 2.05 < Vg < 2.45